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Hassan 

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National Journals

1. Md. Aynal Haque and  M. M. Shahidul Hassan, “Design of a Graded Collector of High Voltage Bipolar Transistors,”  JIEB, Vol.  EE 27, No. 1, pp. 57-61, 1999.

2.  Mohammad Zahangir Kabir and M. M. Shahidul Hassan, “Determination of Excited Energy States of  Submicron Inversion MOSFETs by Variational Method,” JIEB, Vol. EE24, pp. 61-67,  1996.

3.   Md. Nasim Ahmed Dewan and M. M. Shahidul Hassan, “  Modeling of Bipolar Junction Transistor Thermal Effects,” JIEB, Vol.  EE24, pp.19-26,  1996.

      4. M. M. Shahidul Hassan and Md. Kamrul Hassan , “Dependence of  Second Breakdown on Load Inductance and Reverse Base

      Drive,” JIEB, Vol. EE23, pp. 29- 36, 1995.

5.  Md. Tanvir Quddus and M. M. Shahidul Hassan, “Analytical Modelling of Breakdown in Short Channel MOSFET’s”, JIEB, Vol. EE 23, pp. 1-8, 1995.

6.      M. M. Shahidul Hassan, “Optimum Design of Darlington Power Transistor Switches,” JIEB, Vol. 22, No. 1, pp. 215-222 , 1994.

7.  M. M. Shahidul Hassan and G.. R. Choudhury, “ Effect of Doping on Efficiency of  MIS Inversion Layer Solar Cells,"JIEB, Vol. 20, pp. 33-39, 1992.

8.   M. M. Shahidul Hassan and M. A. Choudhury, “ A Model for Designing Power Transistor Switches Driven in Hard Saturation in its On-State,” JIEB,Vol. 20, No. 3, pp.  29-35, 1992.

9.   M. M. Shahidul Hassan, M. M. Rahman and S. M. Sohel Imtiaz, “An Analytical Model for Current Mode Second Breakdown in Epitaxial Bipolar Transistor under Open-Base Operating Conditions,” JIEB, Vol. 18, pp. 23-34 , 1990.

10.  M. M. Shahidul Hassan and M. A. Choudhury, “Effect of Low-High junction on the Current-Gain Product of High-Voltage Power Transistors Operating in Saturation Region,” JIEBS, Vol. 3, pp. 19-22, 1993.

11.  M. M. Shahidul Hassan, “Evaluation of Optimal Values of Double-Graded Collector Parameters of High-Voltage Transistors,” JBES, Vol. 2, No. 1, pp. 37-40, 1992.

12.  M. M. Shahidul Hassan and S. M. Sohel Imtiaz, “Current- Voltage Characteristics  of a Reverse Biased Transistor Driven in Current Mode Second Breakdown,” JBES,  Vol. 1, No. 1, pp. 17-23, 1991.

13.  M. M. Shahidul Hassan and Golam Rasul Chowdhury, “Doping Dependence of Current Mode Second Breakdown in Epitaxial Bipolar Transistor,” JBES, Vol. 1, No. 1, pp. 27-30, 1991.