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Hassan 

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Conferences

1. Md. Ziaur Rahman and M. M. S. Hassan, “Analytical Expression of Collector Current Density and Base Transit time in an Exponential Doped Base Bipolar Transistor for all levels of Injection,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 120-123.

2.   M. M. Shahidul Hassan and Ashok Kumar Karmokar, “Diffusion Capacitance of an Epitaxial High Barrier Schottky Diode,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 124-127.

3.   Farseem M. Mohammedy and M. M. S. Hassan, “A Distributed Transmission Line Model for the Base Transit Time of a nonuniformly Doped Bipolar Junction  Transistor,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 132-135.

4.  M. A. Abedin and M. M. S. Hassan, “Analytical Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” ,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 136-129.

5.   M. M. Shahidul Hassan, “ Base Transit Time of a Bipolar Transistor Considering Field Dependent Mobility,” IEB Conference, pp. 102-106, October 23-25, 2002.

6.  M. A. Abedin and M. M. Shahidul Hassan, “Analytical Base Transit Time Model of a  Uniformly Doped Base Bipolar Transistors Considering Kirk Effect,” IEB Conference, pp. 65-69, October 22-25, 2002.

7.   M. M. Shahidul Hassan,  A. N. Khondker and H. Domingos, “ Conduction Mechanism in BJT’s during Electrical Overstress,” EOS/ESD Symposium Proc., USA, pp. 280-286,1987.

8.   D. J. Wilson, H. Domingos and M. M. Shahidul Hassan,“Electrical Overstress in NMOS Silicided Devices,”EOS/ESD Symposium Proc., USA, pp. 265-273,  1987.

9.    M. M. Shahidul Hassan, A. N. Khondker and H. Domingos,“Effect of Graded California, USA, EOS/ESD Symposium Proc., pp.70-76, 1988.

10.  M. M. Shahidul Hassan and H. Domingos, “The Double Graded Transistor and Its Beneficial Effect on Resistance to Current Mode Second Breakdown,” EOS/ESD Symposium Proc., USA, pp. 127-135, 1989.