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Publications

 International Journals

1.   M. M. Shahidul Hassan , A. H. M. A. Rahim ,“Induced Base Transit Time of an Epitaxial n+pn-n+ Bipolar Transistor in Saturation,” Solid-State Electronics, in print, Vol. 47, No.6, pp. 943-950, 2003. .

 2.   M. M. Shahidul Hassan, “Base Transit Time of an Epitaxial n+pn-n+ Bipolar Transistor  Considering Kirk Effect,” Int. J. Microelectronics and Reliability, Vol. 43, No. 2, pp. 327-332,2003.

3.   M. M. Shahidul Hassan and S. Hasibul Majid, " Electrical Characteristics of an Epitaxial Schottky Barrier Diode," International Journal of Electronics, Vol. 88, No. 9,  pp. 957-967, 2001.

4.   M. M. Shahidul Hassan and  A. H. Khondoker, “ New Expression for Base Transit   Time in a Bipolar Transistor for all levels of Injection,” Microelectronics and Reliability,  Vol. 41, No. 1, pp. 137-140, 2001

5.   M. M. Shahidul Hassan, “ Analytical Base Transit Time of Integrated Bipolar Transistors in Quasi-saturation and Hard-saturation,” IEE Proc.-Circuits, Devices and Systems, 147, No. 2, pp. 129-132, 2000.

6.    M. M. Shahidul Hassan, “ Characteristics of Epitaxial Schottky Barrier Diode for all  Levels of Injection,” Solid-State Electronics, Vol. 44, No. 6, pp.1111-1116, 2000.

7.   M. M. Shahidul Hassan, “Modelling of Lightly Doped Collector of a Bipolar Transistor Operating in Quasi-saturation Region,” Int. Journal of Electronics, Vol.86, No.1, pp. 1-14, 1999.

8.   M. M. Shahidul Hassan and M. A. Choudhury, “ New Formulation of the Collector Current and Current Gain Relations for Design Purposes of Power Transistors Switches,”  IEE Proc. – Circuits, Devices and Systems, Vol. 142, No.2, pp. 113-119, 1995.

9.  M. M. Shahidul Hassan and Md. Aynal Haque, “ Evaluation of Optimal Collector Parameters of a  Transistor with Burried Layer,” Int. J. Electronics,Vol. 75, No. 3, pp. 437-440, 1993.

10.  M. M. Shahidul Hassan, Golam Rasul  Chowdhury and Zahirul Alam, “Breakdown  Voltage of High-Voltage Bipolar Transistors,” Solid-State Electronics,Vol. 34, No.10, pp. 1109-1111, 1991.

11.  M. M. Shahidul Hassan and H. Domingos, “Design of Optimal Values of Parameters  of Epitaxial Bipolar Transistor Switches,” Int. J. Electronics, Vol. 71, No. 5, pp. 745-755, 1991.

12.  M. M. Shahidul Hassan and Ahsan Habib, “Avalanche Breakdown Voltages of Linearly Graded Si Junctions,”  Int. J. Electronics, Vol. 71, No. 3, pp. 403- 409,1991.

13.  M. M. Shahidul Hassan and H. Domingos, “ Breakdown Voltages of Base-Collector Junctions of Medium- and Low -Voltage Graded Collector Transistors,” Int. J. Electronics, Vol. 70, No. 1, pp. 69-75, 1991.

14.  M. M. Shahidul Hassan and H. Domingos, “ Breakdown Voltages of Base Collector Junctions of  High-Voltage  Power Transistors with Graded Collectors,” Int. J. Electronics, Vol. 70, No. 1, pp. 77-83, 1991.

15.  M. M. Shahidul Hassan and H. Domingos, “Control of Current Mode Second Breakdown in Transistors through Use of Double-Graded Collectors,” Solid-State Electronics, Vol. 33, No. 10, pp. 1217-1221, 1991.

16.  M. M. Shahidul Hassan and H. Domingos, “ Calculation of Avalanche Breakdown Voltages of Abrupt Si P-N Junctions,” Int. J. Electronics, Vol. 68, No. 4, pp. 533-537, 1990.

17.  M. M. Shahidul Hassan and H. Domingos, “ Estimate of Peak Voltage for Triggering Current Mode Second Breakdown of BJTs during Inductive Turnoff,” Int. J. Electronics,Vol. 66, No. 3, pp. 361-369, 1989.

18.  M. M. Shahidul Hassan and H. Domingos, “Estimate of Minimum Current for Inducing Current Mode Second Breakdown in Reverse Biased Epitaxial Bipolar Transistors,” Int. J. Electronics, Vol. 66, No. 3, pp. 371-377, 1989.

19.  M. M. Shahidul Hassan and H. Domingos, “Increase of Critical Current Density and Voltage for Triggering Avalanche Injection through Use of  Graded Collector Doping,” Int. J. Microelectronics and Reliability, Vol. 29, No 2, pp. 217-226, 1989.

Submitted:

1.    M. M. Shaidul Hassan,Ziaur Rahmean and AKM Ahsan, “New Expression for Base Transit Time of a nonuniformly base doping Bipolar Transistor,” IEEE Trans. On Electron Devices, in March, 2003.

2.   M. M. Shahidul Hassan, “ Base Transit Time of a Bipolar Transistor considering Field Dependent Mobility,” Int. J. Microelectronics and Reliability, October  2002.

 
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