Publication list |
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1. M. M. Shahidul Hassan , A. H.
M. A. Rahim ,“Induced Base Transit Time of an 2 M. M. Shahidul Hassan,“Base Transit Time of an Epitaxial n+pn-n+
Bipolar Transistor Considering Kirk Effect,” Int.
J. Microelectronics and Reliability, Vol. 43, No. 2, pp. 327-332,2003. 3. M. M. Shahidul Hassan and S. Hasibul Majid, " Electrical Characteristics of an Epitaxial Schottky Barrier Diode," International Journal of Electronics, Vol. 88, No. 9, pp. 957-967, 2001. 4. M. M. Shahidul Hassan and A. H. Khondoker, “ New Expression for Base Transit Time in a Bipolar Transistor for all levels of Injection,” Microelectronics and Reliability, Vol. 41, No. 1, pp. 137-140, 2001 5. M. M. Shahidul Hassan, “ Analytical Base Transit Time of Integrated Bipolar Transistors in Quasi-saturation and Hard-saturation,” IEE Proc.-Circuits, Devices and Systems, 147, No. 2, pp. 129-132, 2000. 6. M. M. Shahidul Hassan, “ Characteristics of Epitaxial Schottky Barrier Diode for all Levels of Injection,” Solid-State Electronics, Vol. 44, No. 6, pp.1111-1116, 2000. 7. M. M. Shahidul Hassan, “Modelling of Lightly Doped Collector of a Bipolar Transistor Operating in Quasi-saturation Region,” Int. Journal of Electronics, Vol. 86, No.1, pp. 1-14, 1999. 8. M. M. Shahidul Hassan and M. A. Choudhury, “ New Formulation of the Collector Current and Current Gain Relations for Design Purposes of Power Transistors Switches,” IEE Proc. – Circuits, Devices and Systems, Vol. 142, No. 2, pp. 113-119, 1995. 9. M. M. Shahidul Hassan and Md. Aynal Haque, “ Evaluation of Optimal Collector Parameters of a Transistor with Burried Layer,” Int. J. Electronics,Vol. 75, No. 3, pp. 437-440, 1993. 10. M. M. Shahidul Hassan, Golam Rasul Chowdhury and Zahirul Alam, “Breakdown Voltage of High-Voltage Bipolar Transistors,” Solid-State Electronics,Vol. 34, No. 10, pp. 1109-1111, 1991. 11. M. M. Shahidul Hassan and H. Domingos, “Design of Optimal Values of Parameters of Epitaxial Bipolar Transistor Switches,” Int. J. Electronics, Vol.71, No. 5, pp. 745-755, 1991. 12. M. M. Shahidul Hassan and Ahsan Habib, “Avalanche Breakdown Voltages of Linearly Graded Si Junctions,” Int. J. Electronics, Vol. 71, No. 3, pp. 403-409, 1991. 13. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base-Collector Junctions of Medium- and Low -Voltage Graded Collector Transistors,” Int. J. Electronics, Vol. 70, No. 1, pp. 69-75, 1991. 14. M. M. Shahidul Hassan and H. Domingos, “ Breakdown Voltages of Base Collector Junctions of High-Voltage Power Transistors with Graded Collectors,” Int. J. Electronics, Vol. 70, No. 1, pp. 77-83, 1991. 15. M. M. Shahidul Hassan and H. Domingos, “Control of Current Mode Second Breakdown in Transistors through Use of Double-Graded Collectors,” Solid-State Electronics, Vol. 33, No. 10, pp. 1217-1221, 1991. 16. M. M. Shahidul Hassan and H. Domingos, “ Calculation of Avalanche Breakdown Voltages of Abrupt Si P-N Junctions,” Int. J. Electronics, Vol. 68, No. 4, pp. 533-537, 1990. 17. M. M. Shahidul Hassan and H. Domingos, “ Estimate of Peak Voltage for Triggering Current Mode Second Breakdown of BJTs during Inductive Turnoff,” Int. J. Electronics,Vol. 66, No. 3, pp. 361-369, 1989. 18. M. M. Shahidul Hassan and H. Domingos, “Estimate of Minimum Current for Inducing Current Mode Second Breakdown in Reverse Biased Epitaxial Bipolar Transistors,” Int. J. Electronics, Vol. 66, No. 3, pp. 371-377, 1989. 19. M. M. Shahidul Hassan and H. Domingos, “Increase of Critical Current Density and Voltage for Triggering Avalanche Injection through Use of Graded Collector Doping,” Int. J. Microelectronics and Reliability, Vol. 29, No 2, pp. 217-226, 1989. 20. Md. Aynal Haque and M. M. Shahidul Hassan, “Design of a Graded Collector of High Voltage Bipolar Transistors,” IEB, Vol. EE 27, No. 1, pp. 57-61, 1999. 21. Mohammad Zahangir Kabir and M. M. Shahidul Hassan, “Determination of Excited Energy States of Submicron Inversion MOSFETs by Variational Method,” JIEB, Vol. EE24, pp. 61-67, 1996. 22. Md. Nasim Ahmed Dewan and M. M. Shahidul Hassan, “ Modeling of Bipolar Junction Transistor Thermal Effects,” JIEB, Vol. EE24, pp.19-26, 1996. 23. M. M. Shahidul Hassan and Md. Kamrul Hassan , “Dependence of Second Breakdown on Load Inductance and Reverse Base Drive,” JIEB, Vol. EE23, pp. 29-36, 1995. 24. Md. Tanvir Quddus and M. M. Shahidul Hassan, “Analytical Modelling of Breakdown in Short Channel MOSFET’s”, JIEB, Vol. EE 23, pp. 1-8, 1995. 25. M. M. Shahidul Hassan, “Optimum Design of Darlington Power Transistor Switches,” JIEB, Vol. 22, No. 1, pp. 215-222 , 1994. 26. M. M. Shahidul Hassan and G.. R. Choudhury, “ Effect of Doping on Efficiency of MIS Inversion Layer Solar Cells,"JIEB, Vol. 20, pp. 33-39, 1992. 27. M. M. Shahidul Hassan and M. A. Choudhury, “ A Model for Designing Power Transistor Switches Driven in Hard Saturation in its On-State,” JIEB, Vol. 20, No. 3, pp. 29-35, 1992. 28. M. M. Shahidul Hassan, M. M. Rahman and S. M. Sohel Imtiaz, “An Analytical Model for Current Mode Second Breakdown in Epitaxial Bipolar Transistor under Open-Base Operating Conditions,” JIEB, Vol. 18, pp. 23-34 , 1990. 29. M. M. Shahidul Hassan and M. A. Choudhury, “Effect of Low-High junction on the Current-Gain Product of High-Voltage Power Transistors Operating in Saturation Region,” JIEBS, Vol. 3, pp. 19-22, 1993. 30. M. M. Shahidul Hassan, “Evaluation of Optimal Values of
Double-Graded Collector
Parameters of High-Voltage Transistors,” JBES, Vol. 2, No. 1, pp. 37-40, 1992. 31. M. M. Shahidul Hassan and S. M. Sohel Imtiaz, “Current- Voltage Characteristics of a Reverse Biased Transistor Driven in Current Mode Second Breakdown,” JBES, Vol. 1, No. 1, pp. 17-23, 1991. 32. M. M. Shahidul Hassan and Golam Rasul Chowdhury, “Doping Dependence of Current Mode Second Breakdown in Epitaxial Bipolar Transistor,” JBES, Vol. 1, No. 1, pp. 27-30, 1991. |
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